5秒后页面跳转
IS42S16400A-10TI PDF预览

IS42S16400A-10TI

更新时间: 2024-11-05 14:42:55
品牌 Logo 应用领域
美国芯成 - ISSI 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
55页 472K
描述
Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54

IS42S16400A-10TI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP54,.46,32
针数:54Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.72访问模式:FOUR BANK PAGE BURST
最长访问时间:7 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PDSO-G54
JESD-609代码:e0长度:22.22 mm
内存密度:67108864 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:4194304 words字数代码:4000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP54,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.003 A
子类别:DRAMs最大压摆率:0.13 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

IS42S16400A-10TI 数据手册

 浏览型号IS42S16400A-10TI的Datasheet PDF文件第2页浏览型号IS42S16400A-10TI的Datasheet PDF文件第3页浏览型号IS42S16400A-10TI的Datasheet PDF文件第4页浏览型号IS42S16400A-10TI的Datasheet PDF文件第5页浏览型号IS42S16400A-10TI的Datasheet PDF文件第6页浏览型号IS42S16400A-10TI的Datasheet PDF文件第7页 
®
IS42S16400A  
ISSI  
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT)  
SYNCHRONOUS DYNAMIC RAM  
April 2003  
FEATURES  
OVERVIEW  
ISSI's64MbSynchronousDRAMIS42S16400Aisorganized  
as 1,048,576 bits x 16-bit x 4-bank for improved  
performance.ThesynchronousDRAMsachievehigh-speed  
data transfer using pipeline architecture. All inputs and  
outputs signals refer to the rising edge of the clock input.  
• Clock frequency:166, 133, 100 MHz  
• Fully synchronous; all signals referenced to a  
positive clock edge  
• Internal bank for hiding row access/precharge  
• Single 3.3V power supply  
• LVTTL interface  
PIN CONFIGURATIONS  
54-Pin TSOP (Type II)  
• Programmable burst length  
– (1, 2, 4, 8, full page)  
VCC  
I/O0  
VCCQ  
I/O1  
I/O2  
GNDQ  
I/O3  
I/O4  
VCCQ  
I/O5  
I/O6  
GNDQ  
I/O7  
VCC  
LDQM  
WE  
1
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
GND  
I/O15  
GNDQ  
I/O14  
I/O13  
VCCQ  
I/O12  
I/O11  
GNDQ  
I/O10  
I/O9  
VCCQ  
I/O8  
GND  
NC  
• Programmable burst sequence:  
Sequential/Interleave  
2
3
4
5
• Self refresh modes  
6
7
• 4096 refresh cycles every 64 ms  
• Random column address every clock cycle  
• Programmable CAS latency (2, 3 clocks)  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
• Burst read/write and burst read/single write  
operations capability  
UDQM  
CLK  
CKE  
NC  
CAS  
RAS  
CS  
• Burst termination by burst stop and precharge  
command  
BA0  
BA1  
A10  
A11  
A9  
A8  
• Byte controlled by LDQM and UDQM  
A0  
A7  
A1  
A6  
• Industrial temperature availability  
(133MHz, 100MHz)  
A2  
A5  
A3  
A4  
VCC  
GND  
• Package: 400-mil 54-pin TSOP II,  
a lead-free package is available.  
PIN DESCRIPTIONS  
WE  
WriteEnable  
A0-A11  
BA0, BA1  
I/O0 to I/O15  
CLK  
Address Input  
LDQM  
UDQM  
Vcc  
Lower Bye, Input/Output Mask  
Upper Bye, Input/Output Mask  
Power  
Bank Select Address  
Data I/O  
System Clock Input  
Clock Enable  
GND  
VccQ  
GNDQ  
NC  
Ground  
CKE  
Power Supply for I/O Pin  
Ground for I/O Pin  
NoConnection  
CS  
Chip Select  
RAS  
RowAddressStrobeCommand  
ColumnAddressStrobeCommand  
CAS  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no  
liabilityarisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingon  
anypublishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
R e v . C  
1
04/16/03  

与IS42S16400A-10TI相关器件

型号 品牌 获取价格 描述 数据表
IS42S16400A-10TLI ISSI

获取价格

Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42S16400A-6T ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400A-6TL ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42S16400A-7T ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400A-7TI ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400A-7TL ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42S16400A-7TLI ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42S16400B ISSI

获取价格

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400B_07 ISSI

获取价格

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400B1 ISSI

获取价格

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM