Datasheet > 存储 > DRAM> IS42S16400C1-6T

IS42S16400C1-6T

更新时间： 2024-11-06 04:44:43

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
55页	487K
描述
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

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IS42S16400C1-6T 数据手册

IS42S16400C1

ISSI

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT)

SYNCHRONOUS DYNAMIC RAM

OCTOBER 2005

FEATURES

OVERVIEW

ISSI's 64Mb Synchronous DRAM IS42S16400C1 is

organized as 1,048,576 bits x 16-bit x 4-bank for improved

performance.ThesynchronousDRAMsachievehigh-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

• Clock frequency: 166, 143 MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Internal bank for hiding row access/precharge

• Single 3.3V power supply

• LVTTL interface

PIN CONFIGURATIONS

54-Pin TSOP (Type II)

• Programmable burst length

– (1, 2, 4, 8, full page)

VDD

DQ0

VDDQ

DQ1

DQ2

GNDQ

DQ3

DQ4

VDDQ

DQ5

DQ6

GNDQ

DQ7

VDD

LDQM

GND

DQ15

GNDQ

DQ14

DQ13

VDDQ

DQ12

DQ11

GNDQ

DQ10

DQ9

VDDQ

DQ8

GND

• Programmable burst sequence:

Sequential/Interleave

• Self refresh modes

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write

operations capability

UDQM

CLK

CKE

CAS

RAS

• Burst termination by burst stop and precharge

command

BA0

BA1

A10

A11

• Byte controlled by LDQM and UDQM

• Industrial temperature availability

• Package: 400-mil 54-pin TSOP II

• Lead-free package is available

VDD

GND

PIN DESCRIPTIONS

WriteEnable

A0-A11

BA0, BA1

DQ0 to DQ15

CLK

Address Input

LDQM

UDQM

VDD

Lower Bye, Input/Output Mask

Upper Bye, Input/Output Mask

Power

Bank Select Address

Data I/O

System Clock Input

Clock Enable

GND

VDDQ

GNDQ

Ground

CKE

Power Supply for DQ Pin

Ground for DQ Pin

NoConnection

Chip Select

RAS

RowAddressStrobeCommand

ColumnAddressStrobeCommand

CAS

liabilityarisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingon

anypublishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. E

10/25/05

12 3 4 5 6 7...55

中文翻译

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与IS42S16400C1-6T相关器件

型号	品牌	获取价格	描述	数据表
IS42S16400C1-6TL	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C1-6TLI	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C1-7T	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C1-7TI	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C1-7TL	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C1-7TLI	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400D	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400D-6BL	ISSI	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, MIN
IS42S16400D-6BLI	ISSI	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, MIN
IS42S16400D-6T	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

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