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IS42S16400_08 PDF预览

IS42S16400_08

更新时间: 2024-11-05 04:44:43
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
55页 686K
描述
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16400_08 数据手册

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IS42S16400  
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT)  
SYNCHRONOUS DYNAMIC RAM  
JANUARY 2008  
FEATURES  
OVERVIEW  
ISSI's64MbSynchronousDRAMIS42S16400isorganizedꢀ  
as1,048,576bitsx16-bitx4-bankforimprovedperformance.  
TheꢀsynchronousꢀDRAMsꢀachieveꢀhigh-speedꢀdataꢀtransferꢀ  
using pipeline architecture. All inputs and outputs signals  
refer to the rising edge of the clock input.  
•ꢀ Clock frequency: 166, 143 MHz  
•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ  
positive clock edge  
•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge  
•ꢀ Singleꢀ3.3Vꢀpowerꢀsupply  
•ꢀ LVTTLꢀinterface  
•ꢀ Programmableꢀburstꢀlengthꢀ  
PIN CONFIGURATIONS  
54-Pin TSOP (Type II)  
– (1, 2, 4, 8, full page)  
•ꢀ Programmableꢀburstꢀsequence:ꢀ  
Sequential/Interleave  
VDD  
DQ0  
VDDQ  
DQ1  
DQ2  
GNDQ  
DQ3  
DQ4  
VDDQ  
DQ5  
DQ6  
GNDQ  
DQ7  
VDD  
LDQM  
WE  
1
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
GND  
DQ15  
GNDQ  
DQ14  
DQ13  
VDDQ  
DQ12  
DQ11  
GNDQ  
DQ10  
DQ9  
VDDQ  
DQ8  
GND  
NC  
2
•ꢀ Selfꢀrefreshꢀmodes  
3
4
•ꢀ 4096ꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms  
•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle  
•ꢀ ProgrammableꢀCAS latency (2, 3 clocks)  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ  
operations capability  
•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ  
UDQM  
CLK  
CKE  
NC  
command  
CAS  
RAS  
CS  
•ꢀ ByteꢀcontrolledꢀbyꢀLDQMꢀandꢀUDQM  
•ꢀ Package:ꢀꢀ400-milꢀ54-pinꢀTSOPꢀII  
BA0  
BA1  
A10  
A11  
A9  
A8  
•ꢀ Lead-freeꢀpackageꢀisꢀavailable  
A0  
A7  
A1  
A6  
•ꢀ AvailableꢀinꢀIndustrialꢀTemperature  
•ꢀ PowerꢀDownꢀandꢀDeepꢀPowerꢀDownꢀMode  
•ꢀ PartialꢀArrayꢀSelfꢀRefresh  
A2  
A5  
A3  
A4  
VDD  
GND  
•ꢀ TemperatureꢀCompensatedꢀSelfꢀRefresh  
•ꢀ OutputꢀDriverꢀStrengthꢀSelectionꢀ(Pleaseꢀcon-  
tactꢀProductꢀManagerꢀforꢀmobileꢀfunctionꢀdetail)  
PIN DESCRIPTIONS  
A0-A11  
Address Input  
WEꢀ  
WriteꢀEnable  
BA0,ꢀBA1ꢀ  
DQ0ꢀtoꢀDQ15ꢀ  
BankꢀSelectꢀAddress  
DataꢀI/O  
LDQMꢀ  
LowerꢀBye,ꢀInput/OutputꢀMask  
UpperꢀBye,ꢀInput/OutputꢀMask  
Power  
UDQMꢀ ꢀ  
CLKꢀ  
CKEꢀ  
CS  
SystemꢀClockꢀInput  
ClockꢀEnable  
VDDꢀ  
GNDꢀ  
VDDqꢀ  
GNDqꢀ  
NC  
Ground  
Chip Select  
PowerꢀSupplyꢀforꢀDQꢀPin  
GroundꢀforꢀDQꢀPin  
No Connection  
RASꢀ  
CAS  
RowꢀAddressꢀStrobeꢀCommand  
Column Address Strobe Command  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no  
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on  
any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. D  
01/3008  

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