Datasheet > IS42S16400-10TI

IS42S16400-10TI

更新时间： 2024-09-15 04:44:43

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
54页	558K
描述
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

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IS42S16400-10TI 数据手册

IS42S16400

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT)

SYNCHRONOUS DYNAMIC RAM

ISSI

FINALPRODUCTION

MAY 2001

FEATURES

OVERVIEW

ISSI's64MbSynchronousDRAMIS42S16400isorganized

as 1,048,576 bits x 16-bit x 4-bank for improved

performance.ThesynchronousDRAMsachievehigh-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

• Clock frequency: 166, 133, 100 MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Internal bank for hiding row access/precharge

• Single 3.3V power supply

• LVTTLinterface

PIN CONFIGURATIONS

54-Pin TSOP (Type II)

• Programmable burst length

– (1, 2, 4, 8, full page)

VCC

I/O0

VCCQ

I/O1

I/O2

GNDQ

I/O3

I/O4

VCCQ

I/O5

I/O6

GNDQ

I/O7

VCC

LDQM

GND

I/O15

GNDQ

I/O14

I/O13

VCCQ

I/O12

I/O11

GNDQ

I/O10

I/O9

VCCQ

I/O8

GND

• Programmableburstsequence:

Sequential/Interleave

• Self refresh modes

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write

operationscapability

• Burst termination by burst stop and precharge

command

UDQM

CLK

CKE

CAS

RAS

• Byte controlled by LDQM and UDQM

• Industrialtemperatureavailability

• Package: 400-mil 54-pin TSOP II

BA0

BA1

A10

A11

VCC

GND

PIN DESCRIPTIONS

A0-A11

BA0, BA1

I/O0 to I/O15

CLK

Address Input

Write Enable

Bank Select Address

Data I/O

LDQM

UDQM

Vcc

Lower Bye, Input/Output Mask

Upper Bye, Input/Output Mask

Power

System Clock Input

Clock Enable

CKE

GND

VccQ

GNDQ

Ground

Chip Select

Power Supply for I/O Pin

Ground for I/O Pin

No Connection

RAS

Row Address Strobe Command

Column Address Strobe Command

CAS

This document contains TARGET SPECIFICATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best

Integrated Silicon Solution, Inc. — 1-800-379-4774

TARGET SPECIFICATION Rev. C

05/04/01

12 3 4 5 6 7...54

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IS42S16400-10TI 替代型号

型号	品牌	替代类型	描述	数据表
IS42S16400D-7TL	ISSI	功能相似	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

与IS42S16400-10TI相关器件

型号	品牌	获取价格	描述	数据表
IS42S16400-6T	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400-7T	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400-7TI	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400-8T	ISSI	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54,
IS42S16400A	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400A-10T	ISSI	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400A-10TI	ISSI	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400A-10TLI	ISSI	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42S16400A-6T	ISSI	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400A-6TL	ISSI	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54

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