Datasheet > IS42S16320F-7BLI-TR

IS42S16320F-7BLI-TR

更新时间： 2024-11-05 22:52:43

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
63页	1265K
描述
IC DRAM 512M PARALLEL 54TFBGA

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IS42S16320F-7BLI-TR 数据手册

浏览型号IS42S16320F-7BLI-TR的Datasheet PDF文件第2页

浏览型号IS42S16320F-7BLI-TR的Datasheet PDF文件第3页

浏览型号IS42S16320F-7BLI-TR的Datasheet PDF文件第4页

浏览型号IS42S16320F-7BLI-TR的Datasheet PDF文件第5页

浏览型号IS42S16320F-7BLI-TR的Datasheet PDF文件第6页

浏览型号IS42S16320F-7BLI-TR的Datasheet PDF文件第7页

IS42R86400F/16320F, IS45R86400F/16320F

IS42S86400F/16320F, IS45S86400F/16320F

32Mx16, 64Mx8

512Mb SDRAM

JULY 2017

DEvIcE OvERvIEW

ISSI's 512Mb Synchronous DRAM achieves high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

Theꢀ512MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ

FEATURES

•ꢀ Clock frequency: 200, 166, 143 MHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

PAcKAGE INFORMATION

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge

•ꢀ Powerꢀsupply:ꢀV^dd/Vddq = 2.3V-3.6V

ꢀ IS42/45SxxxxxFꢀ-ꢀVdd/Vddq = 3.3Vꢀ

ꢀ IS42/45RxxxxxFꢀ-ꢀV^dd/Vddq = 2.5

•ꢀ LVTTLꢀinterface

IS42/45S16320F

IS42/45S86400F

IS42/45R16320F

IS42/45R86400F

8M x 16 x 4 banks

54-pinꢀTSOP-II

54-ballꢀTF-BGA

16M x 8 x 4 banks

54-pinꢀTSOP-II

•ꢀ Programmableꢀburstꢀlengthꢀ

– (1, 2, 4, 8, full page)

KEY TIMING PARAMETERS

•ꢀ Programmableꢀburstꢀsequence:ꢀ

Sequential/Interleave

Parameter

-5

-6

-7

Unit

•ꢀ AutoꢀRefreshꢀ(CBR)

•ꢀ SelfꢀRefresh

•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCAS latency (2, 3 clocks)

ClkꢀCycleꢀTimeꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

5ꢀ

10ꢀ

ꢀ

6ꢀ

10ꢀ

ꢀ

7ꢀ

7.5ꢀ

ꢀ

nsꢀ

ClkꢀFrequencyꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

200ꢀ

100ꢀ

ꢀ

167ꢀ

100ꢀ

143ꢀ

133ꢀ

Mhzꢀ

Mhz

AccessꢀTimeꢀꢀfromꢀClockꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀ

5ꢀ

6ꢀ

ꢀ

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

5.4ꢀ

6ꢀ

5.4ꢀ

5.4

nsꢀ

operations capability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ

command

ADDRESS TABLE

•ꢀ Packages:ꢀ

x8/x16:ꢀ54-pinꢀTSOP-II,ꢀ54-ballꢀTF-BGAꢀ(x16ꢀonly)

Parameter

32M x 16

64M x 8

Conﬁguration 8M x 16 x 4

banks

16M x 8 x 4

banks

•ꢀ TemperatureꢀRange:

Commercial (0^oC to +70^oC)

Industrial (-40^oC to +85^oC)

Automotive, A1 (-40^oC to +85^oC)

Bank Address BA0, BA1

Pins/Balls

BA0, BA1

Automotive, A2 (-40^oC to +105^oC)

Autoprecharge A10/AP

Pins/Ball

A10/AP

Row Address 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)

Column

1K(A0ꢀ–ꢀA9)

2K(A0ꢀ–ꢀA9,ꢀ

Address

A11)

Refresh Count

Com./Ind./A1 8Kꢀ/ꢀ64ms

A2 8Kꢀ/ꢀ16ms

8Kꢀ/ꢀ64ms

8Kꢀ/ꢀ16ms

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such ap-

plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. B1

07/17/2017

12 3 4 5 6 7...63

中文翻译

下载PDF

IS42S16320F-7BLI-TR 替代型号

型号	品牌	替代类型	描述	数据表
IS42S16320B-7BLI-TR	ISSI	功能相似	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 11 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, WB

与IS42S16320F-7BLI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS42S16320F-7TL	ISSI	获取价格	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, TSOP2-54
IS42S16320F-7TLI	ISSI	获取价格	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, TSOP2-54
IS42S16320F-7TLI-TR	ISSI	获取价格	IC DRAM 512M PARALLEL 54TSOP
IS42S16320F-7TL-TR	ISSI	获取价格	IC DRAM 512M PARALLEL 54TSOP
IS42S16400	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400	ICSI	获取价格	2(1)M words x 8(16) bits x 4 banks (64-mbit) synchronous dynamic ram
IS42S16400_08	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400-10T	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400-10TI	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400-6T	ISSI	获取价格	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

与IS42S16320F-7BLI-TR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IS42S16320F-7BLI-TR

IS42S16320F-7BLI-TR 数据手册

IS42S16320F-7BLI-TR 替代型号

与IS42S16320F-7BLI-TR相关器件

与IS42S16320F-7BLI-TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS42S16320F-7BLI-TR

IS42S16320F-7BLI-TR 数据手册

IS42S16320F-7BLI-TR 替代型号

与IS42S16320F-7BLI-TR相关器件

与IS42S16320F-7BLI-TR相关文章

您还可以找

您在本页遇到什么问题？