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IS42S16320F-6BLI PDF预览

IS42S16320F-6BLI

更新时间: 2024-09-15 22:52:43
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器
页数 文件大小 规格书
63页 1265K
描述
IC DRAM 512M PARALLEL 54TFBGA

IS42S16320F-6BLI 数据手册

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IS42R86400F/16320F, IS45R86400F/16320F  
IS42S86400F/16320F, IS45S86400F/16320F  
32Mx16, 64Mx8  
512Mb SDRAM  
JULY 2017  
DEvIcE OvERvIEW  
ISSI's 512Mb Synchronous DRAM achieves high-speed  
data transfer using pipeline architecture. All inputs and  
outputs signals refer to the rising edge of the clock input.  
Theꢀ512MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ  
FEATURES  
•ꢀ Clock frequency: 200, 166, 143 MHz  
•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ  
positive clock edge  
PAcKAGE INFORMATION  
•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge  
•ꢀ Powerꢀsupply:ꢀVdd/Vddq = 2.3V-3.6V  
ꢀ IS42/45SxxxxxFꢀ-ꢀVdd/Vddq = 3.3Vꢀ  
ꢀ IS42/45RxxxxxFꢀ-ꢀVdd/Vddq = 2.5  
•ꢀ LVTTLꢀinterface  
IS42/45S16320F  
IS42/45S86400F  
IS42/45R16320F  
IS42/45R86400F  
8M x 16 x 4 banks  
54-pinꢀTSOP-II  
54-ballꢀTF-BGA  
16M x 8 x 4 banks  
54-pinꢀTSOP-II  
•ꢀ Programmableꢀburstꢀlengthꢀ  
– (1, 2, 4, 8, full page)  
KEY TIMING PARAMETERS  
•ꢀ Programmableꢀburstꢀsequence:ꢀ  
Sequential/Interleave  
Parameter  
-5  
-6  
-7  
Unit  
•ꢀ AutoꢀRefreshꢀ(CBR)  
•ꢀ SelfꢀRefresh  
•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms  
•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle  
•ꢀ ProgrammableꢀCAS latency (2, 3 clocks)  
ClkꢀCycleꢀTimeꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀꢀ  
5ꢀ  
10ꢀ  
6ꢀ  
10ꢀ  
7ꢀ  
7.5ꢀ  
nsꢀ  
ns  
ClkꢀFrequencyꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀꢀ  
200ꢀ  
100ꢀ  
167ꢀ  
100ꢀ  
143ꢀ  
133ꢀ  
Mhzꢀ  
Mhz  
AccessꢀTimeꢀꢀfromꢀClockꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
5ꢀ  
6ꢀ  
•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ  
5.4ꢀ  
6ꢀ  
5.4ꢀ  
5.4  
nsꢀ  
ns  
operations capability  
•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ  
command  
ADDRESS TABLE  
•ꢀ Packages:ꢀ  
x8/x16:ꢀ54-pinꢀTSOP-II,ꢀ54-ballꢀTF-BGAꢀ(x16ꢀonly)  
Parameter  
32M x 16  
64M x 8  
Configuration 8M x 16 x 4  
banks  
16M x 8 x 4  
banks  
•ꢀ TemperatureꢀRange:  
Commercial (0oC to +70oC)  
Industrial (-40oC to +85oC)  
Automotive, A1 (-40oC to +85oC)  
Bank Address BA0, BA1  
Pins/Balls  
BA0, BA1  
Automotive, A2 (-40oC to +105oC)  
Autoprecharge A10/AP  
Pins/Ball  
A10/AP  
Row Address 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)  
Column  
1K(A0ꢀ–ꢀA9)  
2K(A0ꢀ–ꢀA9,ꢀ  
Address  
A11)  
Refresh Count  
Com./Ind./A1 8Kꢀ/ꢀ64ms  
A2 8Kꢀ/ꢀ16ms  
8Kꢀ/ꢀ64ms  
8Kꢀ/ꢀ16ms  
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-  
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain  
the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can  
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such ap-  
plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. B1  
07/17/2017  

IS42S16320F-6BLI 替代型号

型号 品牌 替代类型 描述 数据表
IS42S16320B-6BLI ISSI

完全替代

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

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IS42S16320F-7TLI ISSI

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Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, TSOP2-54