Datasheet > 晶体管 > 功率场效应晶体管> IRLR8103VPBF

IRLR8103VPBF

更新时间： 2024-10-30 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	206K
描述
N-Channel Application-Specific MOSFETs

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRLR8103VPBF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	LEAD FREE, DPAK-3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	7.5
Is Samacsys：	N	Base Number Matches：	1

IRLR8103VPBF 数据手册

PD - 95093A

IRLR8103VPbF

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current

applications

• 100% R_GTested

• Lead-Free

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve an unprecedented balance

of on-resistance and gate charge. The reduced conduction

and switching losses make it ideal for high efficiency DC-

DC converters that power the latest generation of

microprocessors.

D-Pak

DEVICE CHARACTERISTICSꢀ

The IRLR8103V has been optimized for all parameters

that are critical in synchronous buck converters including

IRLR8103V

R_DS(on), gate charge and Cdv/dt-induced turn-on immunity.

7.9 mΩ

27 nC

12 nC

R_DS(on)

Q_G

The IRLR8103V offers an extremely low combination of

Q_sw& R_DS(on)for reduced losses in both control and

synchronous FET applications.

Q_SW

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 2W is possible in a typical PCB

mount application.

Q_OSS

29nC

Absolute Maximum Ratings

Parameter

Symbol

IRLR8103V

Units

V_DS

Drain-Source Voltage

V_GS

±20

Gate-Source Voltage

Continuous Drain or Source Current

(V_GS> 10V)

TC = 25°C

TC= 90°C

363

Pulsed Drain Current

TC = 25°C

TC = 90°C

115

Power Dissipation

°C

T_J, T

I_S

-55 to 150

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

STG

I_SM

363

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case

www.irf.com

Symbol

R_θJA

Typ.

–––

Max.

Units

°C/W

R_θJC

–––

1.09

12/0604

12 3 4 5 6 7 8

中文翻译

下载PDF

IRLR8103VPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRLR8103VTRPBF	INFINEON	完全替代	Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Me
IRLR8103VTRL	INFINEON	类似代替	Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Me
IRLR8103V	INFINEON	功能相似	N-Channel Application-Specific MOSFETs

与IRLR8103VPBF相关器件

型号	品牌	获取价格	描述	数据表
IRLR8103VTR	INFINEON	获取价格	Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Me
IRLR8103VTRL	INFINEON	获取价格	Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Me
IRLR8103VTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Me
IRLR8103VTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Me
IRLR8103VTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Me
IRLR8113	INFINEON	获取价格	HEXFET Power MOSFET
IRLR8113PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLR8113TRL	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRLR8203	INFINEON	获取价格	SMPS MOSFET
IRLR8203PBF	INFINEON	获取价格	SMPS MOSFET

与IRLR8103VPBF相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

18
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLR8103VPBF

IRLR8103VPBF 技术参数

IRLR8103VPBF 数据手册

IRLR8103VPBF 替代型号

与IRLR8103VPBF相关器件

与IRLR8103VPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLR8103VPBF

IRLR8103VPBF 技术参数

IRLR8103VPBF 数据手册

IRLR8103VPBF 替代型号

与IRLR8103VPBF相关器件

与IRLR8103VPBF相关文章

您还可以找

您在本页遇到什么问题？