IRLL014TR

更新时间： 2024-10-02 11:10:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	174K
描述
Power MOSFET

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替代型号

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IRLL014TR 数据手册

IRLL014, SiHLL014

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

R_DS(on)(Ω)

V_GS= 5.0 V

0.20

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Logic-Level Gate Drive

• R_DS(on)Specified at V_GS= 4 V and 5 V

• Fast Switching

Q_g(Max.) (nC)

Q_gs(nC)

8.4

3.5

_gd(nC)

6.0

Configuration

Single

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

SOT-223

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but

has the added advantage of improved thermal performace

due to an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

N-Channel MOSFET

ORDERING INFORMATION

Package

SOT-223

Lead (Pb)-free and Halogen-free

SiHLL014-GE3

IRLL014PbF

SiHLL014-E3

IRLL014

SiHLL014TR-GE3

IRLL014TRPbF^a

SiHLL014T-E3^a

IRLL014TR^a

Lead (Pb)-free

SnPb

SiHLL014

SiHLL014T^a

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

LIMIT

2.7

1.7

UNIT

V_DS

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 10 V

I_D

_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.025

0.017

100

2.7

0.31

3.1

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

E_AR

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_C= 25 °C

T_A= 25 °C

P_D

V/ns

°C

2.0

4.5

dV/dt

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 16 mH, R_g= 25 Ω, I_AS= 2.7 A (see fig. 12).

c. I_SD≤ 10 A, dI/dt ≤ 90 A/μs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91319

S10-1257-Rev. C, 31-May-10

www.vishay.com

12 3 4 5 6 7...9

中文翻译

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IRLL014TR 替代型号

型号	品牌	替代类型	描述	数据表
NTF3055-100T1G	ONSEMI	功能相似	Power MOSFET 3.0 Amps, 60 Volts
NDT014L	FAIRCHILD	功能相似	N-Channel Logic Level Enhancement Mode Field Effect Transistor
STN3NF06L	STMICROELECTRONICS	功能相似	N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET

与IRLL014TR相关器件

型号	品牌	获取价格	描述	数据表
IRLL014TRA	VISHAY	获取价格	Power MOSFET
IRLL014TRPBF	VISHAY	获取价格	Power MOSFET
IRLL014TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRLL014TRPBFA	VISHAY	获取价格	Power MOSFET
IRLL024N	INFINEON	获取价格	HEXFET Power MOSFET
IRLL024NPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLL024NQ	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRLL024NQPBF	INFINEON	获取价格	暂无描述
IRLL024NQTR	INFINEON	获取价格	Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
IRLL024NTR	INFINEON	获取价格	Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Me

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