IRLL024Z

更新时间： 2024-01-21 07:47:25

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	273K
描述
AUTOMOTIVE MOSFET

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IRLL024Z 数据手册

PD - 95886A

IRLL024Z

AUTOMOTIVE MOSFET

HEXFET^®Power MOSFET

Features

Advanced Process Technology

_DSS= 55V

UltraLowOn-Resistance

150°COperatingTemperature

Fast Switching

R_DS(on)= 60mΩ

Repetitive Avalanche Allowed up to Tjmax

I_D= 5.0A

Description

SpecificallydesignedforAutomotiveapplications,thisHEXFET^®

Power MOSFET utilizes the latest processing techniques to

achieveextremelylowon-resistancepersiliconarea. Additional

featuresofthisdesign area150°Cjunctionoperatingtempera-

ture, fast switching speed and improved repetitive avalanche

rating . These features combine to make this design an ex-

tremely efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

SOT-223

Absolute Maximum Ratings

Parameter

Max.

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.0

4.0

@ T_A= 25°C

@ T_A= 70°C

2.8

Power Dissipation

@T_A= 25°C

1.0

@T_A= 25°C Power Dissipation

Linear Derating Factor

W/°C

0.02

± 16

Gate-to-Source Voltage

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

E_AS(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

STG

Thermal Resistance

Parameter

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient (PCB mount, steady state)

°C/W

–––

120

www.irf.com

08/03/04

12 3 4 5 6 7...10

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IRLL024Z 替代型号

型号	品牌	替代类型	描述	数据表
IRLL024ZPBF	INFINEON	类似代替	HEXFET㈢ Power MOSFET
AUIRLL024ZTR	INFINEON	功能相似	Advanced Process Technology

与IRLL024Z相关器件

型号	品牌	获取价格	描述	数据表
IRLL024ZPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRLL024ZTR	INFINEON	获取价格	Small Signal Field-Effect Transistor, 5A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-o
IRLL024ZTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 5A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
IRLL110	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)
IRLL110	VISHAY	获取价格	Power MOSFET
IRLL110, SiHLL110	VISHAY	获取价格	Power MOSFET
IRLL110PBF	VISHAY	获取价格	Power MOSFET
IRLL110PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRLL110TR	VISHAY	获取价格	Power MOSFET
IRLL110TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:100V;Vgs(th)(V):±10