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IRLL024N

更新时间： 2024-10-01 22:23:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 116K
描述
HEXFET Power MOSFET

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IRLL024N 数据手册

 浏览型号IRLL024N的Datasheet PDF文件第2页浏览型号IRLL024N的Datasheet PDF文件第3页浏览型号IRLL024N的Datasheet PDF文件第4页浏览型号IRLL024N的Datasheet PDF文件第5页浏览型号IRLL024N的Datasheet PDF文件第6页浏览型号IRLL024N的Datasheet PDF文件第7页 
PD - 91895  
IRLL024N  
HEXFET® Power MOSFET  
l Surface Mount  
D
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l Fast Switching  
VDSS = 55V  
RDS(on) = 0.065Ω  
G
l Fully Avalanche Rated  
ID = 3.1A  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremelylow on-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The SOT-223 package is designed for surface-mount  
usingvaporphase,infrared,orwavesolderingtechniques.  
Its unique package design allows for easy automatic pick-  
and-place as with other SOT or SOIC packages but has  
the added advantage of improved thermal performance  
due to an enlarged tab for heatsinking. Power dissipation  
of 1.0W is possible in a typical surface mount application.  
S O T -223  
Absolute Maximum Ratings  
Parameter  
Max.  
4.4  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
Continuous Drain Current, VGS @ 10V**  
Continuous Drain Current, VGS @ 10V*  
Continuous Drain Current, VGS @ 10V*  
Pulsed Drain Current   
3.1  
A
ID @ TA = 70°C  
2.5  
IDM  
12  
PD @TA = 25°C  
PD @TA = 25°C  
Power Dissipation (PCB Mount)**  
Power Dissipation (PCB Mount)*  
Linear Derating Factor (PCB Mount)*  
Gate-to-Source Voltage  
2.1  
W
W
1.0  
8.3  
mW/°C  
V
VGS  
± 16  
120  
EAS  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
IAR  
3.1  
EAR  
Repetitive Avalanche Energy*  
Peak Diode Recovery dv/dt ƒ  
0.1  
mJ  
V/ns  
°C  
dv/dt  
TJ, TSTG  
5.0  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Amb. (PCB Mount, steady state)*  
Junction-to-Amb. (PCB Mount, steady state)**  
Typ.  
90  
Max.  
120  
60  
Units  
RθJA  
RθJA  
°C/W  
50  
* When mounted on FR-4 board using minimum recommended footprint.  
** When mounted on 1 inch square copper board, for comparison with other SMD devices.  
www.irf.com  
1
6/15/99  
12345678

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IRLL024N 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLL024NTR INFINEON

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