Datasheet > IRL5NJ7404

IRL5NJ7404

更新时间： 2024-11-17 23:13:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	117K
描述
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 20V, P-CHANNEL

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数据手册

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IRL5NJ7404 数据手册

PD - 94052A

LOGIC LEVEL

HEXFET^®POWER MOSFET

SURFACE MOUNT (SMD-0.5)

IRL5NJ7404

20V, P-CHANNEL

Product Summary

Part Number

RDS(on)

DSS

IRL5NJ7404

-20V

0.04Ω -11A

SMD-0.5

Fifth Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

Features:

Logic Level Gate Drive

n Low RDS(on)

n Avalanche Energy Ratings

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Surface Mount

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

n Light Weight

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C Continuous Drain Current

-11

-7.0

= -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

-44

@ T = 25°C

W/°C

Linear Derating Factor

0.4

Gate-to-Source Voltage

±12

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

157

-11

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

5.0

V/ns

dv/dt

0.7

-55 to 150

Storage Temperature Range

^oC

STG

Package Mounting Surface Temperature

Weight

300 (for 5 s)

1.0 (Typical)

For footnotes refer to the last page

www.irf.com

8/8/01

12 3 4 5 6 7

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