IRL620

更新时间： 2024-11-17 22:48:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管局域网
页数	文件大小	规格书
8页	392K
描述
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

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IRL620 数据手册

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PD -9.1217

IRL620

HEXFET^®Power MOSFET

Dynamic dv/dt Rating

Repetitive Avalanche Rated

Logic-Level Gate Drive

R_DS(ON)Specified at V_GS= 4V & 5V

Fast Switching

Ease of paralleling

Simple Drive Requirements

V_DSS= 200V

R_DS(on)= 0.80Ω

I_D= 5.2A

Description

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute to its wide acceptance

throughout the industry.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V _GS@ 5.0V

Pulsed Drain Current

5.2

3.3

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.40

±10

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

125

5.2

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

5.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

—

Typ.

—

Max.

2.5

—

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

—

0.50

—

°C/W

—

Revision 0

To Order

12 3 4 5 6 7 8

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与IRL620相关器件

型号	品牌	获取价格	描述	数据表
IRL620-002	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRL620-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRL620-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRL620-004	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRL620-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRL620-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRL620-006	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRL620-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRL620-012PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRL620-015	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met