Datasheet > IRL620S, SiHL620S

IRL620S, SiHL620S

更新时间： 2023-12-06 20:02:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	1478K
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Power MOSFET

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IRL620S, SiHL620S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

• Available in tape and reel

• Dynamic dV/dt rating

D²PAK (TO-263)

Available

• Repetitive avalanche rated

• Logic level gate drive

• R_DS(on)specified at V_GS= 4 V and 5 V

• Fast switching

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

N-Channel MOSFET

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY

V_DS(V)

200

R_DS(on)()

V_GS= 10 V

0.80

DESCRIPTION

Q_g(Max.) (nC)

Q_gs(nC)

2.9

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Q_gd(nC)

9.6

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on- resistance in any existing surface-mount

package. The D²PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application.

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

D²PAK (TO-263)

SiHL620S-GE3

D²PAK (TO-263)

SiHL620STRL-GE3^a

IRL620STRLPbF^a

IRL620SPbF

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V_DS

LIMIT

200

UNIT

V_GS

_C= 25 °C

5.2

3.3

Continuous Drain Current

_GSat 5 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.40

0.025

125

5.2

5.0

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

E_AR

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_C= 25 °C

T_A= 25 °C

3.1

5.0

P_D

V/ns

°C

dV/dt

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 6.9 mH, R_g= 25 , I_AS= 5.2 A (see fig. 12)

c. I_SD 5.2 A, dI/dt  95 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0932-Rev. D, 13-Sep-2021

Document Number: 91302

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与IRL620S, SiHL620S相关器件

型号	品牌	描述	获取价格	数据表
IRL620SPBF	INFINEON	HEXFET Power MOSFET	获取价格
IRL620SR	FAIRCHILD	Power Field-Effect Transistor, 3.3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met	获取价格
IRL620STRL	INFINEON	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met	获取价格
IRL620STRLPBF	VISHAY	暂无描述	获取价格
IRL621	SAMSUNG	Power Field-Effect Transistor, 4A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal	获取价格
IRL624	SAMSUNG	Power Field-Effect Transistor, 3.3A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Met	获取价格

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