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IRL620-012PBF PDF预览

IRL620-012PBF

更新时间: 2024-11-18 19:24:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
2页 68K
描述
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IRL620-012PBF 数据手册

 浏览型号IRL620-012PBF的Datasheet PDF文件第2页 

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Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal