IRL620S

更新时间： 2024-09-13 22:48:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	444K
描述
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

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PD -9.1218

IRL620S

HEXFET^®Power MOSFET

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Repetitive Avalanche Rated

Logic-Level Gate Drive

V_DSS= 200V

R_DS(on)= 0.80Ω

I_D= 5.2A

DS(on)

Specified at V =4V & 5V

Fast Switching

Description

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The SMD-220 is a surface-mount power package capable of accommodating die

sizes up to HEX-4. It provides the highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The SMD-220 is suitable for

high current applications because of its low internal connection resistance and can

dissipate up to 2.0W in a typical surface-mount application.

SMD-220

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 5.0 V

Pulsed Drain Current

5.2

3.3

P_D@T_C= 25°C

P_D@T_A= 25°C

Power Dissipation

Power Dissipation (PCB Mount)**

Linear Derating Factor

3.1

0.40

W/°C

Linear Derating Factor (PCB Mount)**

Gate-to-Source Voltage

0.025

V_GS

±10

E_AS

Single Pulse Avalanche Energy

Avalanche Current

125

I_AR

5.2

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.0

V/ns

dv/dt

T_J,T_STG

Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds

-55 to + 150

300 (1.6mm from case)

°C

Thermal Resistance

Parameter

Junction-to-Case

Min.

—

Typ.

—

Max. Units

2.5

R_θJC

R_θJA

Junction-to-Ambient (PCB Mount)**

Junction-to-Ambient

—

°C/W

—

** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer

to Application Note AN-994.

Revision 0

To Order

12 3 4 5 6 7...9

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