Datasheet > IRL60SC216

IRL60SC216

更新时间： 2024-11-19 11:13:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1157K
描述
Infineon’s latest logic level 60 V StrongIRFET™ power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.

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IRL60SC216 数据手册

IRL60SC216

MOSFET

D²-PAKꢀ7pin

StrongIRFETª

Features

•ꢀVeryꢀlowꢀR_DS(on)

•ꢀOptimizedꢀforꢀlogicꢀlevelꢀdrive

•ꢀHighꢀcurrentꢀcarryingꢀcapability

•ꢀ175°Cꢀoperatingꢀtemperature

•ꢀOptimizedꢀforꢀbroadestꢀavailabilityꢀfromꢀdistributionꢀpartners

Benefits

•ꢀReducedꢀconductionꢀlosses

•ꢀIncreasedꢀpowerꢀdensity

•ꢀIncreasedꢀreliabilityꢀversusꢀ150°Cꢀratedꢀparts

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Drain

tab

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

Gate

Pin 1

Source

Pin 2-7

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

V_DS

R_DS(on),typ

1.2

mΩ

R_DS(on),max

I_{D(SiliconꢀLimited)}

Q_G(0V..10V)

1.5

324

174

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IRL60SC216

PG-TO263-7

IRL60SC216

Final Data Sheet

Rev.ꢀ2.2,ꢀꢀ2020-07-02

12 3 4 5 6 7...11

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