Datasheet > IRL5NJ7413SCV

IRL5NJ7413SCV

更新时间： 2024-11-19 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	165K
描述
30V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TXV

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IRL5NJ7413SCV 数据手册

PD - 94271B

HEXFET^®POWER MOSFET

SURFACE MOUNT (SMD-0.5)

IRL5NJ7413

30V, N-CHANNEL

Product Summary

Part Number

DSS

RDS(on)

IRL5NJ7413

30V

0.014Ω

22A*

Fifth Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

SMD-0.5

Features:

Low RDS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

22*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.60

±16

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

190

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

1.0

-55 to 150

^oC

Storage Temperature Range

STG

Package Mounting Surface Temperature

Weight

300 (for 5 s)

1.0

* Current is limited by package

For footnotes refer to the last page

www.irf.com

08/23/04

12 3 4 5 6 7

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