5秒后页面跳转
IRL60B216 PDF预览

IRL60B216

更新时间: 2024-11-19 01:20:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 725K
描述
Brushed Motor drive applications

IRL60B216 数据手册

 浏览型号IRL60B216的Datasheet PDF文件第2页浏览型号IRL60B216的Datasheet PDF文件第3页浏览型号IRL60B216的Datasheet PDF文件第4页浏览型号IRL60B216的Datasheet PDF文件第5页浏览型号IRL60B216的Datasheet PDF文件第6页浏览型号IRL60B216的Datasheet PDF文件第7页 
StrongIRFET™  
IRL60B216  
HEXFET® Power MOSFET  
Application  
Brushed Motor drive applications  
BLDC Motor drive applications  
Battery powered circuits  
Half-bridge and full-bridge topologies  
Synchronous rectifier applications  
Resonant mode power supplies  
OR-ing and redundant power switches  
DC/DC and AC/DC converters  
DC/AC Inverters  
VDSS  
RDS(on) typ.  
max  
60V  
1.5m  
1.9m  
305A  
ID (Silicon Limited)  
ID (Package Limited)  
195A  
Benefits  
S
D
Optimized for Logic Level Drive  
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  
Fully Characterized Capacitance and Avalanche SOA  
Enhanced body diode dV/dt and dI/dt Capability  
Lead-Free*  
G
RoHS Compliant, Halogen-Free  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
IRL60B216  
TO-220  
Tube  
50  
IRL60B216  
6
5
4
3
2
1
0
315  
270  
225  
180  
135  
90  
I
= 100A  
Limited By Package  
D
T
T
= 125°C  
= 25°C  
J
J
45  
0
2
4
6
8
10 12 14 16 18 20  
25  
50  
75  
100  
125  
150  
175  
T
, Case Temperature (°C)  
V
Gate -to -Source Voltage (V)  
C
GS,  
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
www.irf.com  
© 2015 International Rectifier  
Submit Datasheet Feedback  
April 29, 2015  

与IRL60B216相关器件

型号 品牌 获取价格 描述 数据表
IRL60B216_15 INFINEON

获取价格

Brushed Motor drive applications
IRL60HS118 INFINEON

获取价格

英飞凌的新型逻辑电平功率MOSFET有三种不同的电压等级(60 V,80 V和100 V)
IRL60S216 INFINEON

获取价格

Half-bridge and full-bridge topologies
IRL60SC216 INFINEON

获取价格

Infineon’s latest logic level 60 V StrongIRFE
IRL60SL216 INFINEON

获取价格

Half-bridge and full-bridge topologies
IRL610 FAIRCHILD

获取价格

Advanced Power MOSFET
IRL610 SAMSUNG

获取价格

Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met
IRL610A FAIRCHILD

获取价格

Advanced Power MOSFET
IRL610AJ69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRL610J69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met