型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRL60HS118 | INFINEON |
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英飞凌的新型逻辑电平功率MOSFET有三种不同的电压等级(60 V,80 V和100 V) | |
IRL60S216 | INFINEON |
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Half-bridge and full-bridge topologies | |
IRL60SC216 | INFINEON |
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Infineon’s latest logic level 60 V StrongIRFE | |
IRL60SL216 | INFINEON |
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Half-bridge and full-bridge topologies | |
IRL610 | FAIRCHILD |
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Advanced Power MOSFET | |
IRL610 | SAMSUNG |
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Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRL610A | FAIRCHILD |
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Advanced Power MOSFET | |
IRL610AJ69Z | FAIRCHILD |
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Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
IRL610J69Z | FAIRCHILD |
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Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
IRL610S | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-263AB |