Datasheet > IRL60SL216

IRL60SL216

更新时间： 2024-11-19 01:19:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	722K
描述
Half-bridge and full-bridge topologies

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中文翻译

获取价格

数据手册

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IRL60SL216 数据手册

IR MOSFET

StrongIRFET™

IRL60S216

IRL60SL216

HEXFET^®Power MOSFET

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

V_DSS

R_DS(on)typ.

max

60V

1.6m

1.95m

298A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

195A

Benefits

 Optimized for Logic Level Drive

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free*

D²Pak

IRL60S216

TO-262

IRL60SL216

 RoHS Compliant, Halogen-Free

Gate

Drain

Source

Standard Pack

Form

Base part number

Package Type

Orderable Part Number

Quantity

IRL60SL216

IRL60S216

TO-262

D²-Pak

Tube

IRL60SL216

IRL60S216

Tape and Reel

800

315

270

225

180

135

Limited By Package

= 100A

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

2016-1-19

12 3 4 5 6 7...12

中文翻译

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