Datasheet > IRL610S

IRL610S

更新时间： 2024-11-20 23:59:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	247K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 3.3A I(D) \| TO-263AB

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IRL610S 数据手册

IRL610S

FEATURES

BV_DSS= 200 V

R_DS(on)= 1.5Ω

I_D= 3.3 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

♦

Improved Gate Charge

Extended Safe Operating Area

D²-PAK

I²-PAK

150 C Operating Temperature

Lower Leakage Current: 10 A (Max.) @ V_DS= 200V

Lower R_DS(ON): 1.185 (Typ.)

Ω

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

200

3.3

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25°C)

Continuous Drain Current (T_C=100°C)

Drain Current-Pulsed

I_D

2.1

I_DM

V_GS

E_AS

I_AR

(1)

Gate-to-Source Voltage

(2)

(1)

(3)

Single Pulsed Avalanche Energy

Avalanche Current

3.3

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

Total Power Dissipation (T_A=25°C)

Total Power Dissipation (T_C=25°C)

Linear Derating Factor

3.1

P_D

0.26

W/°C

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

°C

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

T_L

Thermal Resistance

Symbol

R_θJC

Characteristic

Typ.

Max.

Units

Junction-to-Case

3.81

R_θJA

Junction-to-Ambient

°C/W

R_θJA

62.5

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

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