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IRL5NJ7404SCV PDF预览

IRL5NJ7404SCV

更新时间: 2023-12-06 20:02:00
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 525K
描述
-20V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package. - Screening Level TXV

IRL5NJ7404SCV 数据手册

 浏览型号IRL5NJ7404SCV的Datasheet PDF文件第2页浏览型号IRL5NJ7404SCV的Datasheet PDF文件第3页浏览型号IRL5NJ7404SCV的Datasheet PDF文件第4页浏览型号IRL5NJ7404SCV的Datasheet PDF文件第5页浏览型号IRL5NJ7404SCV的Datasheet PDF文件第6页浏览型号IRL5NJ7404SCV的Datasheet PDF文件第7页 
PD-94052C  
IRL5NJ7404  
20V, P-CHANNEL  
LOGIC LEVEL POWER MOSFET  
SURFACE MOUNT (SMD-0.5)  
Product Summary  
Part Number  
BVDSS  
RDS(on)  
ID  
IRL5NJ7404  
-20V  
-11A  
0.04  
Features  
Description  
Logic Level Gate Drive  
Low RDS(on)  
IRL5NJ7404 is part of the International Rectifier HiRel  
family of products. IR HiRel Fifth Generation Power  
MOSFETs utilize advanced processing techniques to  
achieve the lowest possible on-resistance per silicon unit  
area. This benefit combined with the fast switching speed  
and ruggedized device design that Power MOSFETs are  
well known for, provide the designer with an extremely  
efficient device for use in a wide variety of applications.  
These devices are well-suitable for applications such as  
switching power supplies, motor established advantages  
of MOSFETs such as voltage controls, inverters, choppers,  
audio amplifiers and high-energy pulse circuits.  
Avalanche Energy Ratings  
Dynamic dv/dt Ratings  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Ceramic Package  
Light Weight  
Surface Mount  
Absolute Maximum Ratings  
Parameter  
Units  
-11  
ID @ VGS = -10V, TC = 25°C Continuous Drain Current  
ID @ VGS = -10V, TC = 100°C Continuous Drain Current  
-7.0  
-44  
50  
A
IDM  
Pulsed Drain Current  
W
W/°C  
V
PD @ TC = 25°C  
Maximum Power Dissipation  
0.4  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
±12  
157  
VGS  
EAS  
IAR  
mJ  
A
-11  
5.0  
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
-0.7  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
1.0 (Typical)  
Weight  
For Footnotes, refer to the page 2.  
1
International Rectifier HiRel Products, Inc.  
2017-10-13  

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