是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 16 weeks |
风险等级: | 1.43 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 140 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最大降落时间(tf): | 80 ns | 门极发射器阈值电压最大值: | 6.5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-247AD |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 454 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 90 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 310 ns |
标称接通时间 (ton): | 120 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGP4066DPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 140A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FRE | |
IRGP4066-EPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR | |
IRGP4066PBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR | |
IRGP4066PBF_15 | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR | |
IRGP4068D-EPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S | |
IRGP4068DPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S | |
IRGP4069D-EPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGP4069DPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGP4069PBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR | |
IRGP4072DPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |