是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.58 | 最大集电极电流 (IC): | 90 A |
集电极-发射极最大电压: | 650 V | 最大降落时间(tf): | 50 ns |
门极发射器阈值电压最大值: | 7.7 V | 门极-发射极最大电压: | 20 V |
最高工作温度: | 175 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 325 W |
最大上升时间(tr): | 80 ns | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGP4263-EPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel, | |
IRGP4263PBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel, | |
IRGP4266D-EPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel, | |
IRGP4266DPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel, | |
IRGP4266-EPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel | |
IRGP4266PBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel | |
IRGP430U | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A) | |
IRGP430UD2 | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, | |
IRGP430U-E | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 25A I(C), 500V V(BR)CES, N-Channel, TO-247AD, TO-247AD, | |
IRGP440U | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A) |