Datasheet > IRGP460LC

IRGP460LC

更新时间： 2024-01-08 09:32:35

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IRGP460LC 数据手册

PD - 9.1232

IRFP460LC

HEXFET^®Power MOSFET

Ultra Low Gate Charge

Reduced Gate Drive Requirement

Enhanced 30V V_gsRating

Reduced C_iss, C_oss, C_rss

Isolated Central Mounting Hole

Dynamic dv/dt Rated

V_DSS= 500V

R_DS(on)= 0.27Ω

I_D= 20A

Repetitive Avalanche Rated

Description

This new series of Low Charge HEXFET Power MOSFETs achieve significantly

lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet

technology the device improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings. These device

improvements combined with the proven ruggedness and reliability of HEXFETs

offer the designer a new standard in power transistors for switching applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V _GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

280

W/°C

Linear Derating Factor

2.2

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±30

Single Pulse Avalanche Energy

Avalanche Current

960

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

3.5

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

––––

Typ.

––––

0.24

Max.

0.45

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

––––

°C/W

––––

Revision 0

12 3 4 5 6 7 8

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