Datasheet > IRGP4760PBF

IRGP4760PBF

更新时间： 2024-01-03 11:52:07

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
11页	817K
描述
Insulated Gate Bipolar Transistor

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数据手册

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IRGP4760PBF 数据手册

IRGP4760PbF

IRGP4760-EPbF

Insulated Gate Bipolar Transistor

V_CES= 650V

I_C= 60A, T_C=100°C

t_SC5.5µs, T_J(max)= 175°C

_CE(ON)typ. = 1.7V @ IC = 48A

IRGP4760PbF

IRGP4760‐EPbF

TO‐247AD

n-channel

TO‐247AC

Applications

• Industrial Motor Drive

• UPS

Gate

Collector

Emitter

• Solar Inverters

• Welding

Features

Benefits

Low V_CE(ON)and Switching Losses

5.5µs Short Circuit SOA

Square RBSOA

High Efficiency in a Wide Range of Applications

Rugged Transient Performance

Maximum Junction Temperature 175°C

Positive V_{CE (ON)}Temperature Coefficient

Increased Reliability

Excellent Current Sharing in Parallel Operation

Lead-Free, RoHs compliant

Environmentally friendly

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRGP4760PbF

IRGP4760-EPbF

TO-247AC

TO-247AD

Tube

IRGP4760PbF

IRGP4760-EPbF

Absolute Maximum Ratings

Parameter

Max.

650

144

Units

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current, V_GE=15V

I_LM

V_GE

Clamped Inductive Load Current, V_GE=20V 

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

192

±20

325

P_D@ T_C= 25°C

P_D@ T_C= 100°C

Maximum Power Dissipation

160

T_J

Operating Junction and

-40 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Thermal Resistance Junction-to-Case 

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

Min.

–––

Typ.

–––

0.24

Max.

0.46

–––

Units

R_JC

R_CS

R_JA

°C/W

–––

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