Datasheet > IRGP6690DPBF

IRGP6690DPBF

更新时间： 2024-02-09 01:14:12

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
13页	634K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRGP6690DPBF 数据手册

IRGP6690DPbF

IRGP6690D-EPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V_CES= 600V

I_C= 90A, T_C=100°C

t_SC≥ 5µs, T_J(max)= 175°C

_CE(ON)typ. = 1.65V @ IC = 75A

IRGP6690D-EPbF

TO-247AD

IRGP6690DPbF

TO-247AC

n-channel

Applications

Gate

• Welding

• H Bridge Converters

Collector

Emitter

Features

Low V_CE(ON)and switching losses

Benefits

High efficiency in a wide range of applications

Optimized for welding and H bridge converters

Improved reliability due to rugged hard switching

performance and higher power capability

Optimized diode for full bridge hard switch converters

Square RBSOA and maximum junction temperature 175°C

5µs short circuit SOA

Enables short circuit protection scheme

Excellent current sharing in parallel operation

Environmentally friendly

Positive V_{CE (ON)}temperature coefficient

Lead-free, RoHS compliant

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRGP6690DPBF

IRGP6690D-EPBF

TO-247AC

TO-247AD

Tube

IRGP6690DPBF

IRGP6690D-EPBF

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current, V_GE= 15V

600

140

225

300

Clamped Inductive Load Current, V_GE= 20V 

I_FRM@ T_C= 100°C Diode Repetitive Peak Forward Current

I_FM

V_GE

Diode Maximum Forward Current 

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

300

±20

483

P_D@ T_C= 25°C

P_D@ T_C= 100°C

Maximum Power Dissipation

241

T_J

Operating Junction and

-40 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

–––

Max.

0.31

2.10

–––

Units

Thermal Resistance Junction-to-Case-(each IGBT) 

Thermal Resistance Junction-to-Case-(each Diode) 

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

R_θJC(IGBT)

R_θJC(Diode)

R_θCS

°C/W

R_θJA

www.irf.com

Submit Datasheet Feedback

November 14, 2014

12 3 4 5 6 7...13

中文翻译

下载PDF

与IRGP6690DPBF相关器件

型号	品牌	获取价格	描述	数据表
IRGP6690DPBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGP8B120KD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRGPC20F	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
IRGPC20K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
IRGPC20KD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGPC20KD2-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRGPC20K-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRGPC20M	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A)
IRGPC20MD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0
IRGPC20M-E	INFINEON	获取价格	暂无描述

与IRGP6690DPBF相关文章

一文带你了解DS28E40主要特征、安全特性、应用场景
2024-07-30

35
RT9172资料手册解读：关节特性、引脚信息、参数说明
2024-07-30

34
一文带你了解SM8760CA资料：主要参数特征
2024-07-30

34
解读MAX3238ECPW：一款多通道RS-232线驱动/接收器
2024-07-30

41

产品中心

服务支持

精选活动

关于我们

帮助中心

IRGP6690DPBF

IRGP6690DPBF 数据手册

与IRGP6690DPBF相关器件

与IRGP6690DPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRGP6690DPBF

IRGP6690DPBF 数据手册

与IRGP6690DPBF相关器件

与IRGP6690DPBF相关文章

您还可以找

您在本页遇到什么问题？