是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | TO-247AD, 3 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.65 | 其他特性: | SHORT CIRCUIT RATED |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 23 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JEDEC-95代码: | TO-247AD | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 225 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 370 ns | 标称接通时间 (ton): | 164 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGPC30K-E | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, | |
IRGPC30M | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A) | |
IRGPC30MD2 | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A | |
IRGPC30MD2-E | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, | |
IRGPC30MD2-EPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, | |
IRGPC30M-E | INFINEON |
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Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, | |
IRGPC30M-EPBF | INFINEON |
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暂无描述 | |
IRGPC30S | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A) | |
IRGPC30S-E | INFINEON |
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暂无描述 | |
IRGPC30S-EPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, |