IRGPC40MD2

更新时间： 2024-09-12 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅软恢复二极管快速软恢复二极管
页数	文件大小	规格书
2页	75K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A)

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Preliminary Data Sheet PD - 9.1084

IRGPC40MD2

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY

Short Circuit Rated

Fast CoPack IGBT

DIODE

Features

V_CES= 600V

• Short circuit rated -10µs @125°C, V _GE= 15V

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for medium operating frequency ( 1 to

10kHz)

_CE(sat)≤ 3.0V

@V_GE= 15V, I_C= 24A

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control

and other applications requiring short circuit withstand capability.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

± 20

I_F@ T_C= 100°C

I_FM

t_sc

V_GE

µs

P_D@ T_C= 25°C

Maximum Power Dissipation

160

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

—

Typ.

—

Max.

0.77

1.7

—

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

—

°C/W

—

0.24

—

6 (0.21)

—

g (oz)

Revision 2

C-397

To Order

中文翻译

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与IRGPC40MD2相关器件

型号	品牌	获取价格	描述	数据表
IRGPC40S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A)
IRGPC40S-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRGPC40S-EPBF	INFINEON	获取价格	暂无描述
IRGPC40U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)
IRGPC40UD1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, TO-247
IRGPC40UD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V,
IRGPC46	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 60A I(C) \| TO-247AC
IRGPC46PBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC
IRGPC50	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 55A I(C) \| TO-247AC
IRGPC50F	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=39A)

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