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IRGPC50MD2-EPBF PDF预览

IRGPC50MD2-EPBF

更新时间: 2024-10-31 21:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 超快软恢复二极管快速软恢复二极管局域网电动机控制晶体管
页数 文件大小 规格书
9页 148K
描述
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD

IRGPC50MD2-EPBF 数据手册

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PD - 9.1145  
IRGPC50MD2  
INSULATEDGATEBIPOLARTRANSISTOR  
WITHULTRAFASTSOFTRECOVERYDIODE  
Short Circuit Rated Fast  
CoPackIGBT  
Features  
C
VCES =600V  
• Short circuit rated -10µs @125°C, VGE = 15V  
• Switching-loss rating includes all "tail" losses  
• HEXFREDTM soft ultrafast diodes  
• Optimized for medium operating frequency ( 1 to  
10kHz) See Fig. 1 for Current vs. Frequency curve  
V
CE(sat) 2.0V  
G
@VGE = 15V, IC = 35A  
E
n-channel  
Description  
Co-packaged IGBTs are a natural extension of International Rectifier's well  
known IGBT line. They provide the convenience of an IGBT and an ultrafast  
recovery diode in one package, resulting in substantial benefits to a host of  
high-voltage, high-current, applications.  
These new short circuit rated devices are especially suited for motor control  
and other applications requiring short circuit withstand capability.  
T
O -247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
Units  
V
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Short Circuit Withstand Time  
Gate-to-Emitter Voltage  
IC @ TC = 25°C  
60  
IC @ TC = 100°C  
35  
ICM  
120  
A
ILM  
120  
IF @ TC = 100°C  
25  
IFM  
120  
tsc  
10  
µs  
V
VGE  
± 20  
200  
PD @ TC = 25°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
W
PD @ TC = 100°C  
78  
TJ  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf•in (1.1 N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case - IGBT  
Min.  
------  
------  
------  
-----  
Typ.  
------  
------  
0.24  
Max.  
0.64  
0.83  
------  
40  
Units  
RθJC  
RθJC  
RθCS  
RθJA  
Wt  
Junction-to-Case - Diode  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
°C/W  
-----  
------  
6 (0.21)  
------  
g (oz)  

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