Datasheet > IRGPC50MD2-EPBF

IRGPC50MD2-EPBF

更新时间： 2024-11-01 21:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		超快软恢复二极管快速软恢复二极管局域网电动机控制栅晶体管
页数	文件大小	规格书
9页	148K
描述
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRGPC50MD2-EPBF 数据手册

PD - 9.1145

IRGPC50MD2

INSULATEDGATEBIPOLARTRANSISTOR

WITHULTRAFASTSOFTRECOVERYDIODE

Short Circuit Rated Fast

CoPackIGBT

Features

V_CES=600V

• Short circuit rated -10µs @125°C, V_GE= 15V

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for medium operating frequency ( 1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

_CE(sat)≤ 2.0V

@V_GE= 15V, I_C= 35A

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control

and other applications requiring short circuit withstand capability.

O -247AC

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

120

I_LM

120

I_F@ T_C= 100°C

I_FM

120

t_sc

µs

V_GE

± 20

200

P_D@ T_C= 25°C

Maximum Power Dissipation

Operating Junction and

P_D@ T_C= 100°C

T_J

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Min.

------

-----

Typ.

------

0.24

Max.

0.64

0.83

------

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

°C/W

-----

------

6 (0.21)

------

g (oz)

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRGPC50MD2-EPBF相关器件

型号	品牌	获取价格	描述	数据表
IRGPC50S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=41A)
IRGPC50U	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRGPC50UD1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, TO-247
IRGPC50UD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A
IRGPC56	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC
IRGPC56PBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC
IRGPC60K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRGPC60LC	ETC	获取价格
IRGPC60M	ETC	获取价格
IRGPF20F	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=5.3A)