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IRGPC40K

更新时间： 2024-02-08 08:27:34

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管电动机控制双极性晶体管栅局域网
页数	文件大小	规格书
7页	110K
描述
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

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中文翻译

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数据手册

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IRGPC40K 数据手册

PD - 9.1077

IRGPC40K

INSULATEDGATEBIPOLARTRANSISTOR

Short Circuit Rated

UltraFastIGBT

Features

• Short circuit rated - 10µs @ 125°C, V_GE= 15V

• Switching-loss rating includes all "tail" losses

• Optimized for high operating frequency (over

V_CES=600V

5kHz)

curve

See Fig. 1 for Current vs. Frequency

V_CE(sat)≤ 3.2V

@V_GE= 15V, I_C= 25A

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier

have higher usable current densities than comparable bipolar transistors,

while at the same time having simpler gate-drive requirements of the

familiar power MOSFET. They provide substantial benefits to a host of

high-voltage, high-current applications.

These new short circuit rated devices are especially suited for motor

control and other applications requiring short circuit withstand capability.

O -247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

t_sc

±20

µs

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

160

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

------

Typ.

------

Max.

0.77

------

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

0.24

------

6 (0.21)

------

g (oz)

12 3 4 5 6 7

中文翻译

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