Datasheet > 晶体管 > IGBT> IRGPC20MD2

IRGPC20MD2

更新时间： 2024-01-24 05:09:45

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管电动机控制双极性晶体管栅局域网软恢复二极管快速软恢复二极管
页数	文件大小	规格书
8页	382K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A)

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PD - 9.1144

IRGPC20MD2

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY

Short Circuit Rated

Fast CoPack IGBT

DIODE

Features

V_CES= 600V

• Short circuit rated -10µs @125°C, V _GE= 15V

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for medium operating frequency ( 1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

_CE(sat)≤ 2.5V

@V_GE= 15V, I_C= 8.0A

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control

and other applications requiring short circuit withstand capability.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

8.0

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

7.0

I_FM

t_sc

± 20

µs

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

—

Typ.

—

Max.

2.1

3.5

—

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

—

°C/W

—

0.24

—

6 (0.21)

—

g (oz)

Revision 2

C-381

To Order

12 3 4 5 6 7 8

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与IRGPC20MD2相关器件

型号	品牌	获取价格	描述	数据表
IRGPC20M-E	INFINEON	获取价格	暂无描述
IRGPC20U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A)
IRGPC30F	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRGPC30FD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=17A
IRGPC30F-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRGPC30K	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRGPC30KD2	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRGPC30KD2-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRGPC30K-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRGPC30M	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)

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