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IRGP50B60PD1-E PDF预览

IRGP50B60PD1-E

更新时间: 2024-10-01 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管功率控制瞄准线双极性晶体管局域网超快软恢复二极管快速软恢复二极管
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11页 473K
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IRGP50B60PD1-E 数据手册

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PD - 94625B  
IRGP50B60PD1  
SMPS IGBT  
WARP2 SERIES IGBT WITH  
ULTRAFAST SOFT RECOVERY DIODE  
C
VCES = 600V  
VCE(on) typ. = 2.00V  
@ VGE = 15V IC = 33A  
Applications  
Telecom and Server SMPS  
PFC and ZVS SMPS Circuits  
Uninterruptable Power Supplies  
Consumer Electronics Power Supplies  
Equivalent MOSFET  
Parameters  
G
RCE(on) typ. = 61mΩ  
ID (FET equivalent) = 50A  
E
Features  
NPT Technology, Positive Temperature Coefficient  
Lower VCE(SAT)  
n-channel  
Lower Parasitic Capacitances  
Minimal Tail Current  
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode  
Tighter Distribution of Parameters  
Higher Reliability  
E
C
G
Benefits  
Parallel Operation for Higher Current Applications  
Lower Conduction Losses and Switching Losses  
Higher Switching Frequency up to 150kHz  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
600  
V
IC @ TC = 25°C  
75  
45  
IC @ TC = 100°C  
ICM  
Pulse Collector Current (Ref. Fig. C.T.4)  
Clamped Inductive Load Current  
150  
ILM  
150  
A
IF @ TC = 25°C  
IF @ TC = 100°C  
IFRM  
Diode Continous Forward Current  
40  
Diode Continous Forward Current  
15  
Maximum Repetitive Forward Current  
60  
VGE  
Gate-to-Emitter Voltage  
±20  
V
PD @ TC = 25°C  
PD @ TC = 100°C  
TJ  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
390  
W
156  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
0.32  
1.7  
Units  
°C/W  
RθJC (IGBT)  
RθJC (Diode)  
RθCS  
Thermal Resistance Junction-to-Case-(each IGBT)  
Thermal Resistance Junction-to-Case-(each Diode)  
Thermal Resistance, Case-to-Sink (flat, greased surface)  
–––  
0.24  
–––  
40  
RθJA  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
Weight  
–––  
6.0 (0.21)  
–––  
g (oz)  
1
www.irf.com  
1/25/06  

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