Datasheet > IRGP6630DPBF

IRGP6630DPBF

更新时间： 2024-10-02 01:23:23

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
13页	692K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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IRGP6630DPBF 数据手册

IRGP6630DPbF

IRGP6630D-EPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V_CES= 600V

I_C= 30A, T_C=100°C

t_SC5µs, T_J(max)= 175°C

_CE(ON)typ. = 1.65V @ IC = 18A

IRGP6630DPbF

IRGP6630D‐EPbF

TO‐247AD

n-channel

TO‐247AC

Applications

Gate

 Welding

 H Bridge Converters

Collector

Emitter

Features

Low V_CE(ON)and Switching Losses

Benefits

High Efficiency in a Wide Range of Applications

Optimized Diode for Full Bridge Hard Switch Converters

Square RBSOA and Maximum Temperature of 175°C

Optimized for Welding and H Bridge Converters

Improved Reliability due to Rugged Hard Switching

Performance and High Power Capability

Enables Short Circuit Protection Operation

Excellent Current Sharing in Parallel Operation

Environmentally friendly

5µs Short Circuit

Positive V_{CE (ON)}Temperature Co-efficient

Lead-free, RoHS compliant

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tube

Quantity

IRGP6630DPbF

IRGP6630D-EPbF

TO-247AC

TO-247AD

IRGP6630DPbF

IRGP6630D-EPbF

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

I_C@ T_C= 25°C

Collector-to-Emitter Voltage

Continuous Collector Current

600

I_C@ T_C= 100°C

Continuous Collector Current

I_CM

I_LM

Pulse Collector Current, V_GE= 15V

Clamped Inductive Load Current, V_GE= 20V 

I_FRM@ T_C= 100°C Diode Repetitive Peak Forward Current

I_FM

Diode Maximum Forward Current 

±20

V_GE

Continuous Gate-to-Emitter Voltage

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

Maximum Power Dissipation

Operating Junction and

192

-40 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

°C

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

–––

Max.

0.78

5.9

–––

Units

Thermal Resistance Junction-to-Case-(each IGBT) 

Thermal Resistance Junction-to-Case-(each Diode) 

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

R_JC(IGBT)

R_JC(Diode)

R_CS

°C/W

R_JA

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November 14, 2014

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与IRGP6630DPBF相关器件

型号	品牌	获取价格	描述	数据表
IRGP6630DPBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGP6650DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGP6650DPBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGP6660DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGP6660DPBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGP6690D	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGP6690DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGP6690DPBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGP8B120KD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRGPC20F	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)

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