Datasheet > IRGP4740DPBF

IRGP4740DPBF

更新时间： 2024-10-02 01:18:11

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
12页	822K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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IRGP4740DPBF 数据手册

IRGP4740DPbF

IRGP4740D-EPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V_CES= 650V

I_C= 40A, T_C=100°C

t_SC≥ 5.5µs, T_J(max)= 175°C

_CE(ON)typ. = 1.7V @ IC = 24A

IRGP4740D-EPbF

TO-247AD

IRGP4740DPbF

TO-247AC

n-channel

Applications

• Industrial Motor Drive

• UPS

• Solar Inverters

• Welding

Gate

Collector

Emitter

Features

Benefits

Low V_CE(ON)and Switching Losses

5.5µs Short Circuit SOA

Square RBSOA

High Efficiency in a Wide Range of Applications

Rugged Transient Performance

Maximum Junction Temperature 175°C

Positive V_{CE (ON)}Temperature Coefficient

Increased Reliability

Excellent Current Sharing in Parallel Operation

Lead-Free, RoHs compliant

Environmentally friendly

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRGP4740DPbF

IRGP4740D-EPbF

TO-247AC

TO-247AD

Tube

IRGP4740DPbF

IRGP4740D-EPbF

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current, V_GE= 15V

Clamped Inductive Load Current, V_GE= 20V 

Diode Continuous Forward Current

Diode Maximum Forward Current 

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

650

±20

I_LM

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FM

V_GE

P_D@ T_C= 25°C

P_D@ T_C= 100°C

250

125

Maximum Power Dissipation

T_J

Operating Junction and

-40 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

–––

Max.

0.6

1.6

–––

Units

Thermal Resistance Junction-to-Case-(each IGBT) 

Thermal Resistance Junction-to-Case-(each Diode) 

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

R_θJC(IGBT)

R_θJC(Diode)

R_θCS

°C/W

R_θJA

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November 13, 2014

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中文翻译

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与IRGP4740DPBF相关器件

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IRGP4760PBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor
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