Datasheet > IRGP4066-EPBF

IRGP4066-EPBF

更新时间： 2024-01-28 09:58:04

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	275K
描述
INSULATED GATE BIPOLAR TRANSISTOR

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中文翻译

获取价格

数据手册

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IRGP4066-EPBF 数据手册

PD - 97577

IRGP4066PbF

INSULATED GATE BIPOLAR TRANSISTOR

IRGP4066-EPbF

Features

• Low V_{CE (ON)}Trench IGBT Technology

V_CES= 600V

• Low Switching Losses

• Maximum Junction Temperature 175 °C

• 5 μS short circuit SOA

I_C(Nominal)= 75A

• SquareRBSOA

t_SC≥ 5μs, T_J(max)= 175°C

• 100% of The Parts Tested for I_LM

• Positive V_{CE (ON)}Temperature Coefficient

• TightParameterDistribution

• LeadFreePackage

V_CE(on)typ. = 1.7V

n-channel

Benefits

• High Efficiency in a Wide Range of Applications

• Suitable for a Wide Range of Switching Frequencies due to

Low V_{CE (ON)}and Low Switching Losses

• Rugged Transient Performance for Increased Reliability

• Excellent Current Sharing in Parallel Operation

TO-247AC

IRGP4066PbF

TO-247AD

IRGP4066-EPbF

Gate

Collector

Emitter

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Nominal Current

600

140

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_NOMINAL

I_CM

I_LM

Pulse Collector Current, V_GE= 15V

Clamped Inductive Load Current, V_GE= 20V

225

300

V_GE

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

±20

±30

P_D@ T_C= 25°C

454

P_D@ T_C= 100°C

227

T_J

-55 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

°C

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

Typ.

–––

Max.

0.33

–––

Units

°C/W

R_θJC

R_θCS

R_θJA

Thermal Resistance Junction-to-Case

–––

Thermal Resistance, Case-to-Sink (flat, greased surface)

0.24

–––

Thermal Resistance, Junction-to-Ambient (typical socket mount)

www.irf.com

10/8/2010

12 3 4 5 6 7...10

中文翻译

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