IRGP4085DPBF

更新时间： 2024-10-01 04:08:23

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管双极性晶体管
页数	文件大小	规格书
7页	667K
描述
PDP TRENCH IGBT

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IRGP4085DPBF 数据手册

PD - 97286

IRGP4085DPbF

PDP TRENCH IGBT

Key Parameters

Features

V_CEmin

330

1.69

250

150

Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery

Circuits in PDP Applications

V_CE(ON)typ. @ I_C= 70A

I_RPmax @ T_C= 25°C c

T_Jmax

Low V_CE(on)and Energy per Pulse (E_PULSE

for Improved Panel Efficiency

)

°C

High Repetitive Peak Current Capability

Lead Free Package

TO-247AC

n-channel

Gate

Collector

Emitter

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced

trenchIGBTtechnologytoachievelowV_CE(on)andlowE_PULSE^TMratingpersiliconareawhichimprovepanel

efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current

capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP

applications.

Absolute Maximum Ratings

Max.

Parameter

Units

V_GE

±30

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_RP@ T_C= 25°C

P_D@T_C= 25°C

P_D@T_C= 100°C

Continuous Collector Current, V_GE@ 15V

Continuous Collector, V_GE@ 15V

Repetitive Peak Current c

Power Dissipation

250

160

Power Dissipation

1.3

Linear Derating Factor

W/°C

°C

T_J

-40 to + 150

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lbxin (1.1Nxm)

Thermal Resistance

Parameter

Thermal Resistance Junction-to-Case-(each IGBT)

Thermal Resistance Junction-to-Case-(each Diode)

Case-to-Sink (flat, greased surface)

Junction-to-Ambient (typical socket mount) d

Weight

Typ.

–––

Max.

0.80

Units

R_θJC(IGBT)

R_θJC(Diode)

R_θCS

1.6

2.4

0.24

–––

°C/W

g (oz)

R_θJA

–––

6.0 (0.21)

–––

www.irf.com

06/05/07

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