5秒后页面跳转
IRG4PC60U-EP PDF预览

IRG4PC60U-EP

更新时间: 2024-11-21 20:07:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网功率控制晶体管
页数 文件大小 规格书
9页 126K
描述
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

IRG4PC60U-EP 数据手册

 浏览型号IRG4PC60U-EP的Datasheet PDF文件第2页浏览型号IRG4PC60U-EP的Datasheet PDF文件第3页浏览型号IRG4PC60U-EP的Datasheet PDF文件第4页浏览型号IRG4PC60U-EP的Datasheet PDF文件第5页浏览型号IRG4PC60U-EP的Datasheet PDF文件第6页浏览型号IRG4PC60U-EP的Datasheet PDF文件第7页 
PD - 94441  
IRG4PC60U-P  
INSULATED GATE BIPOLAR TRANSISTOR  
UltraFast Speed IGBT  
C
Features  
• UltraFast: Optimized for high operating  
frequencies up to 50 kHz in hard switching and  
>200 kHz in resonant mode.  
VCES =600V  
• Application in UPS, Welding and High Current power  
supply.  
V
CE(on) typ. = 1.6V  
G
• Generation 4 IGBT design provides tighter  
parameter distribution and higher efficiency.  
• Solder plated version of industry standard  
TO-247AC package.  
@VGE = 15V, IC = 40A  
E
n-channel  
Benefits  
• Generation 4 IGBT's offer highest efficiency available.  
• Solder plated version of the TO-247 allows the reflow  
soldering of the package heatsink to a substrate material.  
• Designed for best performance when used with IR  
HEXFRED & IR FRED companion diodes.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
75  
Units  
V
VCES  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
IC @ TC = 25°C  
IC @ TC = 100°C  
40  
A
ICM  
300  
300  
± 20  
200  
520  
210  
ILM  
Clamped Inductive Load Current ‚  
Gate-to-Emitter Voltage  
VGE  
V
EARV  
Reverse Voltage Avalanche Energy ƒ  
Maximum Power Dissipation  
mJ  
PD @ TC = 25°C  
W
PD @ TC = 100°C  
Maximum Power Dissipation  
TJ  
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
°C  
°C  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
Maximum Reflow Temperature‡  
300 (0.063 in. (1.6mm from case )  
10 lbf•in (1.1N•m)  
230 (Time above 183°C  
should not exceed 100s)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
----  
Max.  
0.24  
----  
40  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Wt  
Case-to-Sink, Flat, Greased Surface  
0.24  
----  
°C/W  
Junction-to-Ambient (Typical Socket Mount)  
Junction-to-Ambient (PCB Mount, Steady State)†  
----  
20  
Weight  
6 (0.21)  
----  
g (oz)  
www.irf.com  
1
04/26/02  

与IRG4PC60U-EP相关器件

型号 品牌 获取价格 描述 数据表
IRG4PC60U-P INFINEON

获取价格

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
IRG4PC60UPBF INFINEON

获取价格

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
IRG4PC60U-PPBF INFINEON

获取价格

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
IRG4PE40FD INFINEON

获取价格

Fit Rate / Equivalent Device Hours
IRG4PE40KD INFINEON

获取价格

Fit Rate / Equivalent Device Hours
IRG4PE40MD INFINEON

获取价格

Fit Rate / Equivalent Device Hours
IRG4PE40SD INFINEON

获取价格

Fit Rate / Equivalent Device Hours
IRG4PE40UD INFINEON

获取价格

Fit Rate / Equivalent Device Hours
IRG4PF40FD INFINEON

获取价格

Fit Rate / Equivalent Device Hours
IRG4PF40KD INFINEON

获取价格

Fit Rate / Equivalent Device Hours