Datasheet > 晶体管 > IGBT> IRG4PH20

IRG4PH20

更新时间： 2024-11-24 22:16:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
8页	232K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

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数据手册

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IRG4PH20 数据手册

PD -91776

IRG4PH20K

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• High short circuit rating optimized for motor control,

t_sc=10µs, V_CC= 720V , T_J= 125°C,

V_GE= 15V

V_CES= 1200V

• Combines low conduction losses with high

switching speed

V_{CE(on) typ.}= 3.17V

• Latest generation design provides tighter parameter

distribution and higher efficiency than previous

generations

@V_GE= 15V, I_C= 5.0A

n-channel

Benefits

• As a Freewheeling Diode we recommend our

HEXFRED^TMultrafast, ultrasoft recovery diodes for

minimum EMI / Noise and switching losses in the

Diode and IGBT

• Latest generation 4 IGBT's offer highest power

density motor controls possible

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

1200

I_C@ T_C= 25°C

I_C@ T_C= 100°C

5.0

I_CM

I_LM

t_sc

±20

µs

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

130

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.1

Units

R_θJC

R_θCS

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

–––

°C/W

R_θJA

–––

6 (0.21)

–––

g (oz)

www.irf.com

6/25/98

12 3 4 5 6 7 8

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与IRG4PH20相关器件

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IRG4PH30	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
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IRG4PH30KPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT