是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-247AC |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 2.77 |
其他特性: | LOW CONDUCTION LOSS | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 51 A | 集电极-发射极最大电压: | 900 V |
配置: | SINGLE | 最大降落时间(tf): | 220 ns |
门极发射器阈值电压最大值: | 6 V | 门极-发射极最大电压: | 20 V |
JEDEC-95代码: | TO-247AC | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 250 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 200 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 370 ns |
标称接通时间 (ton): | 54 ns | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRG4PH40UPBF | INFINEON |
类似代替 |
Ultra Fast Speed IGBT | |
IRG4PC40WPBF | INFINEON |
类似代替 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4PH50UDPBF | INFINEON |
类似代替 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG4PG40FD | INFINEON |
获取价格 |
Fit Rate / Equivalent Device Hours | |
IRG4PG40KD | INFINEON |
获取价格 |
Fit Rate / Equivalent Device Hours | |
IRG4PG40MD | INFINEON |
获取价格 |
Fit Rate / Equivalent Device Hours | |
IRG4PG40SD | INFINEON |
获取价格 |
Fit Rate / Equivalent Device Hours | |
IRG4PG40UD | INFINEON |
获取价格 |
Fit Rate / Equivalent Device Hours | |
IRG4PH20 | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) | |
IRG4PH20K | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) | |
IRG4PH20KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)ty | |
IRG4PH20KDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG4PH20K-EPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD |