PD - 95569
IRG4PC60U-PPbF
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast Speed IGBT
Features
C
UltraFast: Optimized for high operating
frequencies up to 50 kHz in hard switching and
>200 kHz in resonant mode.
VCES=600V
Application in UPS, Welding and High Current power
supply.
VCE(on) typ. = 1.6V
G
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
Solder plated version of industry standard
TO-247AC package.
@VGE = 15V, IC = 40A
E
n-channel
Lead-Free
Benefits
Generation 4 IGBT's offer highest efficiency available.
Solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
Designed for best performance when used with IR
HEXFRED & IR FRED companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
600
75
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
IC @ TC = 100°C
40
A
ICM
300
300
± 20
200
520
210
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
VGE
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
mJ
PD @ TC = 25°C
W
PD @ TC = 100°C
Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Maximum Reflow Temperature
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
230 (Time above 183°C
should not exceed 100s)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
----
Max.
0.24
----
40
Units
RθJC
RθCS
RθJA
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
0.24
----
°C/W
Junction-to-Ambient (Typical Socket Mount)
Junction-to-Ambient (PCB Mount, Steady State)
Weight
----
20
6 (0.21)
----
g (oz)
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1
07/15/04