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IRG4PC60U PDF预览

IRG4PC60U

更新时间: 2024-11-20 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
8页 124K
描述
INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC60U 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TO-247AC, 3 PINReach Compliance Code:compliant
风险等级:5.06外壳连接:COLLECTOR
最大集电极电流 (IC):75 A集电极-发射极最大电压:600 V
配置:SINGLEJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):460 ns
标称接通时间 (ton):78 nsBase Number Matches:1

IRG4PC60U 数据手册

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PD - 94443  
IRG4PC60U  
INSULATED GATE BIPOLAR TRANSISTOR  
UltraFast Speed IGBT  
C
Features  
• UltraFast: Optimized for high operating  
frequencies up to 50 kHz in hard switching,  
>200 kHz in resonant mode.  
VCES =600V  
• Generation 4 IGBT design provides tighter  
parameter distribution and higher efficiency.  
• Industry standard TO-247AC package.  
V
CE(on) typ. = 1.6V  
G
@VGE = 15V, IC = 40A  
E
n-channel  
Benefits  
• Generation 4 IGBT's offer highest efficiency available.  
• IGBT's optimized for specified application conditions.  
• Designed for best performance when used with IR  
Hexfred & IR Fred companion diodes.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
75  
Units  
V
VCES  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
IC @ TC = 25°C  
IC @ TC = 100°C  
40  
A
ICM  
300  
300  
± 20  
200  
520  
210  
ILM  
Clamped Inductive Load Current ‚  
Gate-to-Emitter Voltage  
VGE  
V
EARV  
Reverse Voltage Avalanche Energy ƒ  
Maximum Power Dissipation  
mJ  
PD @ TC = 25°C  
W
PD @ TC = 100°C  
Maximum Power Dissipation  
TJ  
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw.  
300 (0.063 in. (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
----  
Max.  
0.24  
----  
Units  
°C/W  
RθJC  
RθCS  
RθJA  
Wt  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient, typical socket mount  
Weight  
0.24  
----  
40  
6 (0.21)  
----  
g (oz)  
www.irf.com  
1
04/26/02  

IRG4PC60U 替代型号

型号 品牌 替代类型 描述 数据表
IRG4PC60UPBF INFINEON

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INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

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