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IRG4PC60F-PPBF PDF预览

IRG4PC60F-PPBF

更新时间: 2024-11-02 04:44:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
8页 232K
描述
INSULATED GATE BIPOLAR TRANSISTOR (Fast Speed IGBT)

IRG4PC60F-PPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.13外壳连接:COLLECTOR
最大集电极电流 (IC):90 A集电极-发射极最大电压:600 V
配置:SINGLEJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):770 ns
标称接通时间 (ton):105 nsBase Number Matches:1

IRG4PC60F-PPBF 数据手册

 浏览型号IRG4PC60F-PPBF的Datasheet PDF文件第2页浏览型号IRG4PC60F-PPBF的Datasheet PDF文件第3页浏览型号IRG4PC60F-PPBF的Datasheet PDF文件第4页浏览型号IRG4PC60F-PPBF的Datasheet PDF文件第5页浏览型号IRG4PC60F-PPBF的Datasheet PDF文件第6页浏览型号IRG4PC60F-PPBF的Datasheet PDF文件第7页 
PD - 95567  
IRG4PC60F-PPbF  
Fast Speed IGBT  
INSULATED GATE BIPOLAR TRANSISTOR  
C
Features  
• Fast: Optimized for medium operating  
frequencies ( 1-5 kHz in hard switching, >20  
kHz in resonant mode).  
• Generation 4 IGBT design provides tighter  
parameter distribution and higher efficiency.  
• Solder plated version of industry standard  
TO-247AC package.  
VCES=600V  
VCE(on)typ. =1.50V  
G
@VGE = 15V, IC = 60A  
E
n-channel  
• Lead-Free  
Benefits  
• Generation 4 IGBT's offer highest efficiency available.  
• IGBT's optimized for specified application conditions.  
• Solder plated version of the TO-247 allows the reflow  
soldering of the package heatsink to a substrate material.  
• Designed for best performance when used with IR  
HEXFRED & IR FRED companion diodes.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
90  
Units  
V
VCES  
C @ TC = 25°C  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
I
IC @ TC = 100°C  
60  
A
ICM  
120  
120  
± 20  
200  
520  
210  
ILM  
Clamped Inductive Load Current ‚  
Gate-to-Emitter Voltage  
VGE  
V
EARV  
Reverse Voltage Avalanche Energy ƒ  
Maximum Power Dissipation  
mJ  
PD @ TC = 25°C  
W
PD @ TC = 100°C  
Maximum Power Dissipation  
TJ  
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
°C  
°C  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
Maximum Reflow Temperature ‡  
300 (0.063 in. (1.6mm from case )  
10 lbf•in (1.1N•m)  
230 (Time above 183°C  
should not exceed 100s)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.24  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Wt  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient (Typical Socket Mount)  
Junction-to-Ambient (PCB Mount, Steady State)†  
Weight  
0.24  
°C/W  
–––  
–––  
20  
6 (0.21)  
–––  
g (oz)  
www.irf.com  
1
07/15/04  

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