Datasheet > IRG4PC60F-EP

IRG4PC60F-EP

更新时间： 2024-11-21 19:47:55

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网栅功率控制晶体管
页数	文件大小	规格书
9页	122K
描述
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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IRG4PC60F-EP 数据手册

PD - 94440

IRG4PC60F-P

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

V_CES=600V

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

V_CE(on)typ. = 1.50V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency.

• Solder plated version of industry standard

TO-247AC package.

@V_GE= 15V, I_C= 60A

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiency available.

• IGBT's optimized for specified application conditions.

• Solder plated version of the TO-247 allows the reflow

soldering of the package heatsink to a substrate material.

• Designed for best performance when used with IR

HEXFRED & IR FRED companion diodes.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

120

± 20

200

520

210

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

P_D@ T_C= 100°C

Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Maximum Reflow Temperature

300 (0.063 in. (1.6mm from case )

10 lbf•in (1.1N•m)

230 (Time above 183°C

should not exceed 100s)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.24

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient (Typical Socket Mount)

Junction-to-Ambient (PCB Mount, Steady State)

Weight

0.24

°C/W

–––

6 (0.21)

–––

g (oz)

www.irf.com

04/26/02

12 3 4 5 6 7...9

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