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IRG4BC40U PDF预览

IRG4BC40U

更新时间: 2024-11-01 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关功率控制局域网
页数 文件大小 规格书
8页 171K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

IRG4BC40U 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5Is Samacsys:N
其他特性:ULTRA FAST SWITCHING外壳连接:COLLECTOR
最大集电极电流 (IC):40 A集电极-发射极最大电压:600 V
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):380 ns
标称接通时间 (ton):49 nsBase Number Matches:1

IRG4BC40U 数据手册

 浏览型号IRG4BC40U的Datasheet PDF文件第2页浏览型号IRG4BC40U的Datasheet PDF文件第3页浏览型号IRG4BC40U的Datasheet PDF文件第4页浏览型号IRG4BC40U的Datasheet PDF文件第5页浏览型号IRG4BC40U的Datasheet PDF文件第6页浏览型号IRG4BC40U的Datasheet PDF文件第7页 
PD - 91456E  
IRG4BC40U  
UltraFast Speed IGBT  
INSULATED GATE BIPOLAR TRANSISTOR  
C
Features  
• UltraFast: optimized for high operating  
frequencies 8-40 kHz in hard switching, >200  
kHz in resonant mode  
VCES =600V  
• Generation 4 IGBT design provides tighter  
parameter distribution and higher efficiency than  
Generation 3  
VCE(on) typ. = 1.72V  
G
@VGE = 15V, IC = 20A  
E
• Industry standard TO-220AB package  
n-channel  
Benefits  
• Generation 4 IGBTs offer highest efficiency available  
• IGBTs optimized for specified application conditions  
• Designed to be a "drop-in" replacement for equivalent  
industry-standard Generation 3 IR IGBTs  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Gate-to-Emitter Voltage  
600  
V
IC @ TC = 25°C  
40  
IC @ TC = 100°C  
20  
A
ICM  
160  
ILM  
160  
VGE  
20  
V
EARV  
Reverse Voltage Avalanche Energy ƒ  
Maximum Power Dissipation  
15  
160  
mJ  
PD @ TC = 25°C  
W
PD @ TC = 100°C Maximum Power Dissipation  
65  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting torque, 6-32 or M3 screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbfin (1.1Nm)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
Min.  
------  
------  
------  
------  
Typ.  
------  
0.50  
Max.  
0.77  
------  
80  
Units  
°C/W  
RθJC  
RθCS  
RθJA  
Wt  
------  
2 (0.07)  
------  
g (oz)  
www.irf.com  
1
4/17/2000  

IRG4BC40U 替代型号

型号 品牌 替代类型 描述 数据表
IRG4BC40UPBF INFINEON

完全替代

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

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