Datasheet > IRG4BC40WSPBF

IRG4BC40WSPBF

更新时间： 2024-11-02 19:48:55

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
10页	339K
描述
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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IRG4BC40WSPBF 数据手册

PD - 95861

IRG4BC40WS

IRG4BC40WL

INSULATED GATE BIPOLAR TRANSISTOR

Features

Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

V_CES= 600V

Industry-benchmark switching losses improve

efficiency of all power supply topologies

50% reduction of Eoff parameter

Low IGBT conduction losses

Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

Benefits

_{CE(on) typ.}= 2.05V

@V_GE= 15V, I_C= 20A

n-channel

Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150 kHz

("hard switched" mode)

Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

D²Pak

TO-262

IRG4BC40WS IRG4BC40WL

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

160

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

160

V_GE

± 20

160

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

160

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (0.063 in. (1.6mm) from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

0.77

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

0.5

Junction-to-Ambient (PCB Mounted steady-state)

Weight

2.0 (0.07)

www.irf.com

4/19/04

12 3 4 5 6 7...10

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