IRFZ24LPBF

更新时间： 2024-01-08 10:49:10

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	429K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFZ24LPBF 数据手册

IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

• Surface Mount (IRFZ24S, SiHFZ24S)

• Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)

• 175 °C Operating Temperature

• Fast Switching

R_DS(on)()

V_GS= 10 V

0.10

Q_g(Max.) (nC)

5.8

_gs(nC)

_gd(nC)

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

D²PAK (TO-263)

I²PAK (TO-262)

The D²PAK is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the highest

power capability and the last lowest possible on-resistance

in any existing surface mount package. The D²PAK is

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0 W

in a typical surface mount application. The through-hole

version (IRFZ24L, SiHFZ24L) is available for low-profile

applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

D²PAK (TO-263)

SiHFZ24S-GE3

IRFZ24SPbF

D²PAK (TO-263)

SiHFZ24STRR-GE3

I²PAK (TO-262)

IRFZ24LPbF

SiHFZ24L-E3

Lead (Pb)-free

SiHFZ24S-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V_DS

LIMIT

UNIT

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^{a, e}

I_DM

Linear Derating Factor

0.40

100

3.7

W/°C

Single Pulse Avalanche Energy^{b, e}

E_AS

P_D

_C= 25 °C

Maximum Power Dissipation

V/ns

°C

T_A= 25 °C

Peak Diode Recovery dV/dt^{c, e}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

dV/dt

T_J, T_stg

4.5

- 55 to + 175

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 400 μH, R_g= 25 , I_AS= 17 A (see fig. 12).

c. I_SD 17 A, dI/dt  140 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. Uses IRFZ24, SiHFZ24 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90366

S11-1063-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRFZ24LPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFZ24N	INFINEON	获取价格	Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)
IRFZ24N	NXP	获取价格	N-channel enhancement mode TrenchMOS transistor
IRFZ24N,127	NXP	获取价格	IRFZ24N
IRFZ24NL	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)
IRFZ24NL	TRSYS	获取价格	Power MOSFET
IRFZ24NLPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ24NPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ24NS	TRSYS	获取价格	Power MOSFET
IRFZ24NS	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)
IRFZ24NSPBF	INFINEON	获取价格	HEXFET Power MOSFET

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