Datasheet > IRFZ24NS

IRFZ24NS

更新时间： 2024-02-27 01:12:03

品牌	Logo	应用领域
TRSYS		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
2页	160K
描述
Power MOSFET

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中文翻译

获取价格

技术参数
数据手册

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IRFZ24NS 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

IRFZ24NS 数据手册

IRFZ24NS/NL

Power MOSFET

V_{DSS =}55V, R_DS(on)= 0.07 mohm, I_D= 17 A

Symbol

N Channel

ELECTRICAL CHARACTERISICS at

C Maximum. Unless stated Otherwise

Value

Tj = 25

Unit

Parameter

Symbol

V_(BR)DSS

Test Conditions

Typ

Max

Min

Volt

V_GS= 0 V_DC,I_D= 250µA

Drain to Source Breakdown Voltage

Drain to Source Leakage Current

V_DS= 55V_DC, V_GS= 0V_DC

V_DS= 44V_DC, V_GS= 0V_DC

I_DSS

250

µA

Tj=150

V_GS= +20V_DC

100

-100

I_GSS

V_GS(th)

Gate to Source Leakage Current

Gate Threshold Voltage

_GS= -20V_DC

I_D= 250µA

_DS= V_GS,

2.0

4.0

Volt

R_DS(on)V_GS= 10V_DC, I_D= 10A

0.07

Static Drain to Source On - Resistance

Q_G

Gate Charge

Gate to Source Charge

Gate to Drain Charge

5.3

7.6

I_D= 25A

Q_GS

V_DS= 44V_DC

_GS= 10V_DC

Q_GD

C_ISS

Input Capacitance

Output Capacitance

Transfer Capacitance

370

140

C_OSS

C_RSS

V_DS= 25V_DC, V_GS= 0V_DC, f = 1.0MHZ

(on)

Turn On Delay Time

Turn Off Delay Time

Rise Time

4.9

(off)

_DD= 28V_DC, I_D= 25A, R_G= 12

Fall Time

Continuous Source Current

Pulsed Source Current

I_S

I_SM

1.3

V_GS= 0V_DC, I_S=10A,

Tp = 300µS

Forward Voltage (Diode)

Single Pulse Avalanche Energy

Repetive Avalanche Energy

Avalanche Current

V_SD

E_AS

E_AR

4.5

I_AR

(Tj = 25 C unless stated otherwise)

MAXIMUM RATINGS

Parameter

Condition

Symbol

V_GS

Value

+/- 20V

Unit

Gate to Source Voltage

Volt

Amp

Drain to Source

Voltage

Continuous Drain Current

V_DSS

I_D

I_DM

P_D

Pulsed Drain Current

Amp

Total Power Dissapation

(T_A= 25 C)

Thermal Resistance

(Junction to Ambient)

R_TH

C/W

(J-A)

Maximum Operating Temperature Range (Tj) -55 to +175

Maximum Storage Temperature Range (Tstg) -55 to +175

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