Datasheet > IRFZ24PBF

IRFZ24PBF

更新时间： 2024-02-17 21:24:08

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	3809K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFZ24PBF 数据手册

IRFZ24, SiHFZ24

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

• 175 °C Operating Temperature

• Fast Switching

R_DS(on)()

V_GS= 10 V

0.10

Q_g(Max.) (nC)

5.8

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

TO-220AB

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220AB

IRFZ24PbF

SiHFZ24-E3

IRFZ24

Lead (Pb)-free

SnPb

SiHFZ24

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

0.40

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

E_AS

P_D

100

T_C= 25 °C

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 403 μH, R_g= 25 , I_AS= 17 A (see fig. 12).

c. I_SD 17 A, dI/dt  140 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

www.kersemi.com

12 3 4 5 6 7

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