IRFZ24VSPBF

更新时间： 2024-11-28 03:37:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
10页	267K
描述
HEXFET Power MOSFET

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中文翻译

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IRFZ24VSPBF 数据手册

PD - 95524

IRFZ24VSPbF

IRFZ24VLPbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Optimized for SMPS Applications

l Lead-Free

V_DSS= 60V

R_DS(on)= 60mΩ

I_D= 17A

Description

Advanced HEXFET^®Power MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The D²Pak is a surface mount power package capable of accommodating

die sizes up to HEX-4. It provides the highest power capability and the

lowest possible on-resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a typical surface

mount application.

D²Pak

IRFZ24VS

TO-262

IRFZ24VL

Thethrough-holeversion(IRFZ24VL)isavailableforlow-profileapplications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

0.29

W/°C

Linear Derating Factor

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

4.4

V/ns

4.2

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient (PCB Mounted)**

Typ.

–––

Max.

3.4

Units

R_θJC

R_θJA

°C/W

www.irf.com

7/16/04

12 3 4 5 6 7...10

中文翻译

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与IRFZ24VSPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFZ24VSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ24VSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ24VSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 14A I(D) \| TO-220AB
IRFZ25-001	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-002	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-003	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta

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